Segregation Behavior of Impurities in Gallium during Directional Solidification

The effective solid–liquid segregation coefficients of impurities in Ga were measured in binary and multicomponent gallium–impurity (Sn, In, Cu, Ge, Ag) systems. The results demonstrate that the introduction of Sn into both binary and multicomponent systems notably increases the effective segregation coefficients of the other impurities. The likely reason is that the presence of Sn leads to the formation of linear and planar defects, which gives rise to nonequilibrium impurity trapping by the growing gallium crystal.