Two dimensional analytical modeling of a high-K gate stack triple-material double gate strained silicon-on-nothing MOSFET with a vertical Gaussian doping

被引：0
|
作者：
Pritha Banerjee
Priyanka Saha
Subir Kumar Sarkar
机构：
[1] Jadavpur University,Department of Electronics and Telecommunication Engineering
来源：
Journal of Computational Electronics | 2018年 / 17卷
关键词：
High-k gate stack; Strained Si; Silicon-On-Nothing (SON ) MOSFET; Short channel effects (SCEs); Drain-induced barrier lowering (DIBL); Hot carrier Effect (HCE);
D O I：
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学科分类号：
摘要：
This paper presents the two-dimensional analytical modeling of high-k gate stack Triple material double gatestrained SON MOSFET with a vertical Gaussian-like doping profile. The expression for surface potential has been calculated by solving the 2-D Poisson’s equation and by considering the parabolic potential approximation. The threshold voltages as well as the electric field are also calculated for the proposed model. In addition, detailed studies of the device response towards the various short-channel effects are also examined. The analytical results are verified using the results obtained from a 2-D device simulator, namely ATLAS, Silvaco.
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页码：172 / 180
页数：8
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