Delay uncertainty in MLGNR interconnects under process induced variations of width, doping, dielectric thickness and mean free path

被引：0

作者：

K. Narasimha Reddy

Manoj Kumar Majumder

Brajesh Kumar Kaushik

机构：

[1] Indian Institute of Technology Roorkee,Department of Electronics and Communication Engineering, Microelectronics and VLSI Group

来源：

Journal of Computational Electronics | 2014年 / 13卷

关键词：

Multi-layered graphene nanoribbon (MLGNR); Multi-conductor transmission line (MTL); Equivalent ; model; Process variation; VLSI interconnects;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper analyzes the delay performance of multi-layered graphene nanoribbon (MLGNR) interconnect under process induced variations. An equivalent multi-conductor transmission line (MTL) model driven by CMOS gate is employed for the analysis. The propagation delay is analyzed for different interconnect lengths and widths by taking into account the variations in width, dielectric thickness, dielectric constant, interlayer distance and doping concentration of MLGNR. Encouragingly, it is observed that the average deviation in delay is below 3 % for all process induced parameter variations except for the mean free path.

引用

页码：639 / 646

页数：7