Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO

被引:0
|
作者
Parmanand Sharma
Amita Gupta
K. V. Rao
Frank J. Owens
Renu Sharma
Rajeev Ahuja
J. M. Osorio Guillen
Börje Johansson
G. A. Gehring
机构
[1] Royal Institute of Technology,Department of Materials Science
[2] Armament Research,Tmfy
[3] Development and Engg Ctr,MSE
[4] Center for Solid State Sciences,Department of Physics
[5] Arizona State University,Department of Materials Science
[6] Condensed Matter Theory Group,Department of Physics and Astronomy
[7] University of Uppsala,undefined
[8] Box 530,undefined
[9] Applied Materials Physics,undefined
[10] Royal Institute of Technology,undefined
[11] University of Sheffield,undefined
[12] Institute of Materials Research,undefined
[13] Tohoku University,undefined
来源
Nature Materials | 2003年 / 2卷
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摘要
The search for ferromagnetism above room temperature in dilute magnetic semiconductors has been intense in recent years. We report the first observations of ferromagnetism above room temperature for dilute (<4 at.%) Mn-doped ZnO. The Mn is found to carry an average magnetic moment of 0.16 μB per ion. Our ab initio calculations find a valance state of Mn2+ and that the magnetic moments are ordered ferromagnetically, consistent with the experimental findings. We have obtained room-temperature ferromagnetic ordering in bulk pellets, in transparent films 2–3 μm thick, and in the powder form of the same material. The unique feature of our sample preparation was the low-temperature processing. When standard high-temperature (T > 700 °C) methods were used, samples were found to exhibit clustering and were not ferromagnetic at room temperature. This capability to fabricate ferromagnetic Mn-doped ZnO semiconductors promises new spintronic devices as well as magneto-optic components.
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页码:673 / 677
页数:4
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