Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers

被引：0

作者：

K. Obata

K. Sugioka

K. Midorikawa

T. Inamura

H. Takai

机构：

[1] RIKEN (The Institute of Physical and Chemical Research),Department of Electric Engineering, Faculty of Engineering

[2] Tokyo Denki University,undefined

来源：

Applied Physics A | 2006年 / 82卷

关键词：

Excimer Laser; Gallium Nitride; Incident Laser Beam; Deep Etching; High Etching Rate;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The deep etching of GaN(0001) thin films epitaxially grown on Al2O3(0001) has been investigated by laser ablation using F2 and KrF excimer lasers. The simultaneous irradiation with F2 and KrF excimer lasers markedly improves etching quality compared with single-KrF excimer laser ablation and provides almost the same quality as that in the case of single-F2 laser ablation with a high etching rate. Additionally, the present method achieves the deep etching of a GaN film of more than 5 μm in depth with steep side walls at an angle of 87° by changing the laser incidence angle.

引用

页码：479 / 483

页数：4

共 19 条

[1] Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers
Obata, K
Sugioka, K
Midorikawa, K
Inamura, T
Takai, H
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 82 (03): : 479 - 483
[2] Dynamics study of multiwavelength excitation process using F2 and KrF excimer lasers
Obata, K
Sugioka, K
Inamura, T
Takai, H
Toyoda, K
Midorikawa, K
PHOTON PROCESSING IN MICROELECTRONICS AND PHOTONICS II, 2003, 4977 : 10 - 15
[3] VUV-UV multiwavelength excitation process, using F2 and KrF excimer lasers
Sugioka, K
Akake, T
Obata, K
Midorikawa, K
SEVENTH INTERNATIONAL CONFERENCE ON LASER AND LASER-INFORMATION TECHNOLOGIES, 2001, 4644 : 9 - 18
[4] Multiwavelength excitation process of fused silica by combination of F2 and KrF excimer lasers
Obata, K
Sugioka, K
Akane, T
Aoki, N
Toyoda, K
Midorikawa, K
LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING VI, 2001, 4274 : 141 - 148
[5] Dual-beam ablation of fused silica by multiwavelength excitation process using KrF excimer and F2 lasers
J. Zhang
K. Sugioka
T. Takahashi
K. Toyoda
K. Midorikawa
Applied Physics A, 2000, 71 (1) : 23 - 26
[6] Dual-beam ablation of fused silica by multiwavelength excitation process using KrF excimer and F2 lasers
Zhang, J
Sugioka, K
Takahashi, T
Toyoda, K
Midorikawa, K
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (01): : 23 - 26
[7] Multiwavelength excitation processing using F2 and KrF excimer lasers for precision microfabrication of hard materials
Sugioka, K
Akane, T
Obata, K
Toyoda, K
Midorikawa, K
APPLIED SURFACE SCIENCE, 2002, 197 : 814 - 821
[8] High-speed and efficient control of refractive index change of fused silica by multiwavelength excitation process using F2 and KrF excimer lasers
Obata, K
Sugioka, K
Kono, T
Takai, H
Toyoda, K
Midorikawa, K
THIRD INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION, 2003, 4830 : 373 - 378
[9] High-efficiency refractive index modification of fused silica by F2 and KrF excimer laser multiwavelength excitation process
Obata, K
Sugioka, K
Akane, T
Toyoda, K
Midorikawa, K
PHOTON PROCESSING IN MICROELECTRONICS AND PHOTONICS, 2002, 4637 : 243 - 250
[10] Characterization of fused silica ablation by F2-KrF excimer laser multiwavelength excitation process
Obata, K
Sugioka, K
Akane, T
Aoki, N
Toyoda, K
Midorikawa, K
SECOND INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION, 2002, 4426 : 441 - 444

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