Monte Carlo simulations of electron channeling a bent (110) channel in silicon

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作者：
Andriy Kostyuk
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来源：
The European Physical Journal D | 2013年 / 67卷
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Atomic and Molecular Collisions;
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摘要：
Results obtained with a new Monte Carlo code ChaS for channeling of 855 MeV electrons along the crystallographic plane (110) in a bent silicon crystal are presented. The dependence of the dechanneling length and the asymptotic acceptance of the channel on the crystal bending is studied.
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