The accuracy and validity of the simulation of VLSI MOS transistors

被引：1
|
作者：
Denisenko V.V. [1 ]
机构：
[1] Research Laboratory of Design Automation, Taganrog
来源：
Russian Microelectronics | 2009年 / 38卷 / 04期
关键词：
PACS:; 85.30.De;
D O I：
10.1134/S1063739709040064
中图分类号：
学科分类号：
摘要：
Corrections of the concepts of the accuracy and validity of compact models of deep submicron MOS transistors are suggested for the circuit design of VLSIs. © 2009 Pleiades Publishing, Ltd.
引用
收藏
页码：273 / 278
页数：5
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