Design of Multi-state DRAM Using Quantum Dot Gate Non-volatile Memory (QDNVM)

This paper presents the fabrication of single level cell (SLC), multi-level cell (MLC), triple-level cell (TLC) and quadruple level cell (QLC) using quantum dot gate non-volatile memory (QDNVM). QDNVM can store multiple bits in its discrete quantum dots in the gate region which represents different states of the memory cell. The precise control of charge storage in the discrete quantum dots I the gate region of the QDNVM solves the reliability issues of MLC and TLC. Dynamic Random Access Memory (DRAM) is very compact memory device which needs to refresh periodically. Use of QDNVM will increase the bit storing capability of DRAM. Compact design and increase bit handling capability of designed DRAM will help to increase the information density per unit area.