Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

被引：0
|
作者：
D. V. Gulyaev
K. S. Zhuravlev
A. K. Bakarov
A. I. Toropov
机构：
[1] Russian Academy of Sciences,Institute for Semiconductor Physics, Siberian Branch
[2] Novosibirsk State National Research University,undefined
来源：
Semiconductors | 2015年 / 49卷
关键词：
GaAs; Acceptor Doping; InGaAs Layer; Photoluminescence Band; AlGaAs Layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p+-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.
引用
收藏
页码：224 / 228
页数：4
相关论文
共 50 条
  • [1] Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers
    Gulyaev, D. V.
    Zhuravlev, K. S.
    Bakarov, A. K.
    Toropov, A. I.
    SEMICONDUCTORS, 2015, 49 (02) : 224 - 228
  • [2] PHOTOLUMINESCENCE OF AlGaAs/InGaAs/GaAs PHEMT HETERO-STRUCTURES WITH DONOR-ACCEPTOR DOPING OF BARRIERS
    Gulyaev, D., V
    Zhuravlev, K. S.
    Bakarov, A. K.
    Toropov, A., I
    2014 24TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY (CRIMICO), 2014, : 667 - 668
  • [3] AlGaAs/InGaAs/GaAs heterostructures based pHEMT
    Maleev, NA
    Zhukov, AE
    Kovsh, AP
    Ustinov, VM
    Khitko, VI
    Shulenkov, AS
    12TH INTERNATIONAL CONFERENCE - MICROWAVE & TELECOMMUNICATION TECHNOLOGY, CONFERENCE PROCEEDINGS, 2002, : 155 - 156
  • [4] Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study
    Naik, KG
    Rao, KSRK
    Srinivasan, T
    Muralidharan, R
    Mehta, SK
    SOLID STATE COMMUNICATIONS, 2004, 132 (12) : 805 - 808
  • [5] Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics
    Mironova, M. S.
    Zubkov, V. I.
    Dudin, A. L.
    Glinskii, G. F.
    SEMICONDUCTORS, 2018, 52 (04) : 507 - 510
  • [6] Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics
    M. S. Mironova
    V. I. Zubkov
    A. L. Dudin
    G. F. Glinskii
    Semiconductors, 2018, 52 : 507 - 510
  • [7] Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides
    I. S. Vasil’evskiĭ
    G. B. Galiev
    E. A. Klimov
    V. G. Mokerov
    S. S. Shirokov
    R. M. Imamov
    I. A. Subbotin
    Semiconductors, 2008, 42 : 1084 - 1091
  • [8] Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides
    Vasil'evskii, I. S.
    Galiev, G. B.
    Klimov, E. A.
    Mokerov, V. G.
    Shirokov, S. S.
    Imamov, R. M.
    Subbotin, I. A.
    SEMICONDUCTORS, 2008, 42 (09) : 1084 - 1091
  • [9] Photoluminescence and electron subband population in modulation doped AlGaAs/GaAs/AlGaAs heterostructures
    Pozela, J
    Juciene, V
    Namajunas, A
    Pozela, K
    Mokerov, VG
    Fedorov, YV
    Kaminskii, VE
    Hook, AV
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) : 5564 - 5567
  • [10] Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, δ-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application
    Fu, Y
    Wang, TH
    Willander, M
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) : 1759 - 1763
12345