On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

被引：0

作者：

S. S. Arutyunyan

A. Yu. Pavlov

B. Yu. Pavlov

K. N. Tomosh

Yu. V. Fedorov

机构：

[1] Russian Academy of Sciences,Institute of Ultrahigh Frequency Semiconductor Electronics

[2] Russian Academy of Sciences,Institute of Microelectronics Technology and High

来源：

Semiconductors | 2016年 / 50卷

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摘要：

The fabrication of a two-layer Si3N4/SiO2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si3N4/SiO2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

引用

页码：1117 / 1121

页数：4

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