Luminescence and electrical properties of diode Si/SiGe:Er/Si heterostructures

被引：0
|
作者：
A. G. Spivakov
L. V. Krasil’nikova
M. V. Stepikhova
Yu. N. Drozdov
Z. F. Krasil’nik
V. Yu. Chalkov
V. G. Shengurov
机构：
[1] Russian Academy of Sciences,Institute for Physics of Microstructures
[2] Nizhni Novgorod State University,Physicotechnical Research Institute
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2008年 / 72卷 / 2期
关键词：
Leakage Current; Versus Characteristic; Erbium; Ideality Factor; Diode Structure;
D O I：
10.3103/S1062873808020263
中图分类号：
学科分类号：
摘要：
The diode Si/Si1 − xGex:Er/Si heterostructures grown by sublimation molecular-beam epitaxy in a german atmosphere have been investigated. The electrical properties of Si1 − xGex:Er heterolayers, the currentvoltage characteristics of the structures, and their photo-and electroluminescent properties in the forward-and reverse-bias modes have been analyzed. A relationship is established between the heterolayer parameters and the luminescence response features and characteristics of diode structures.
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页码：238 / 242
页数：4
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