Critical current in planar SNS Josephson junctions

被引：0
|
作者：
T. E. Golikova
F. Hübler
D. Beckmann
N. V. Klenov
S. V. Bakurskiy
M. Yu. Kupriyanov
I. E. Batov
V. V. Ryazanov
机构：
[1] Russian Academy of Sciences,Institute of Solid State Physics
[2] Karlsruhe Institute of Technology,Institute of Nanotechnology
[3] Moscow State University,Skobeltsyn Institute of Nuclear Physics
[4] Moscow Institute of Physics and Technology (State University),undefined
来源：
JETP Letters | 2013年 / 96卷
关键词：
JETP Letter; Critical Current; Josephson Junction; Normal Metal; Electron Beam Lithography;
D O I：
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中图分类号：
学科分类号：
摘要：
Specific features of the proximity effect and Josephson behavior of submicron planar SNS junctions fabricated by electron beam lithography and shadow evaporation have been studied experimentally and theoretically. The critical current of the junctions has been found to drastically increase with a decrease in temperature, which is associated with a change in the effective size of the weak link owing to the additional SN interface.
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页码：668 / 673
页数：5
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