Nb3Cl8: a prototypical layered Mott-Hubbard insulator

被引:0
|
作者
Sergii Grytsiuk
Mikhail I. Katsnelson
Erik G.C.P. van Loon
Malte Rösner
机构
[1] Radboud University,Institute for Molecules and Materials
[2] Lund University,NanoLund and Division of Mathematical Physics, Physics Department
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Despite its simplicity and relevance for the description of electronic correlations in solids, the Hubbard model is seldom inarguably realized in real materials. Here, we show that monolayer Nb3Cl8 is an ideal candidate to be described within a single-orbital Hubbard model, constructed within a “molecular” rather than atomic basis set using ab initio constrained random phase approximation calculations. We provide the necessary ingredients to connect experimental reality with ab initio material descriptions and correlated electron theory, which clarifies that monolayer Nb3Cl8 is a Mott insulator with a gap of about 1.4 to 2.0 eV depending on its dielectric environment. Comparisons to an atomistic three-orbital model show that the single-molecular-orbital description is adequate and reliable. We further comment on the electronic and magnetic structure of the compound and show that the Mott insulating state survives in the low-temperature bulk phases of the material featuring distinct experimentally verifiable characteristics.
引用
收藏
相关论文
共 50 条
  • [1] Nb3Cl8: a prototypical layered Mott-Hubbard insulator
    Grytsiuk, Sergii
    Katsnelson, Mikhail I.
    Loon, Erik G. C. P. van
    Roesner, Malte
    NPJ QUANTUM MATERIALS, 2024, 9 (01)
  • [2] Mott-Hubbard insulator in infinite dimensions
    Kalinowski, E
    Gebhard, F
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2002, 126 (3-4) : 979 - 1007
  • [3] Pressure-induced metallic state in a van der Waals cluster Mott insulator Nb3Cl8
    Shanab, P. F.
    Han, X.
    Li, X.
    Liu, Z. Y.
    Yang, P. T.
    Wang, B. S.
    Wang, J. F.
    Liu, H. Y.
    Shi, Y. G.
    Sun, J. P.
    Cheng, J. -g.
    MATERIALS TODAY PHYSICS, 2023, 38
  • [4] Hall Effect in Doped Mott-Hubbard Insulator
    Kuchinskii, E. Z.
    Kuleeva, N. A.
    Sadovskii, M. V.
    Khomskii, D. I.
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2023, 136 (03) : 368 - 377
  • [5] A new study on the doped Mott-Hubbard insulator
    Pao, CH
    Bickers, NE
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2003, 131 (3-4) : 223 - 227
  • [6] GAP STATES IN A DOPED MOTT-HUBBARD INSULATOR
    SEN, P
    BASU, S
    SINGH, A
    PRAMANA-JOURNAL OF PHYSICS, 1995, 44 (01): : L77 - L83
  • [7] SiC(0001): A surface Mott-Hubbard insulator
    Anisimov, VI
    Bedin, AE
    Korotin, MA
    Santoro, G
    Scandolo, S
    Tosatti, E
    PHYSICAL REVIEW B, 2000, 61 (03): : 1752 - 1755
  • [8] Antiferromagnetic Spin Fluctuations and Structural Transition in Cluster Mott Insulator Candidate Nb3Cl8 Revealed by 93Nb- and 35Cl-NMR
    Zhou, Y. Z.
    Han, X.
    Luo, J.
    Wu, D. T.
    Fang, A. F.
    Shen, B.
    Feng, B. J.
    Shi, Y. G.
    Yang, J.
    Zhou, R.
    CHINESE PHYSICS LETTERS, 2025, 42 (03)
  • [9] ON THE REACTION OF NB3CL8 WITH HCL
    SCHAFER, H
    LESAAR, H
    ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1985, 523 (04): : 187 - 190
  • [10] Ultrafast Charge Recombination in a Photoexcited Mott-Hubbard Insulator
    Lenarcic, Zala
    Prelovsek, Peter
    PHYSICAL REVIEW LETTERS, 2013, 111 (01)