Erratum to: Enhanced piezoelectric properties of off-stoichiometric strontium bismuth tantalate Sr0.8Bi2.2Ta2O9 ceramics

被引:0
|
作者
H. Takeda
C. Fujioka
R. Aoyagi
S. Okamura
T. Shiosaki
机构
[1] Nara Institute of Science and Technology (NAIST),Graduate School of Materials Science
来源
Applied Physics A | 2006年 / 82卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
The above article was published with the errors in the piezoelectric constants (d33, d31, d15) of S0.8B2.2T ceramics in main text of p. 133 and Table 3 of p. 134. The article showed that the d33, d31, and d15 values are 10.8, 5.2, and 6.0 pC/Nin themain text and 6.0, 13.0, 10.2 pC/N in Table 3, respectively. The correct piezoelectric constants are d33 = 13.0, d31 = 6.0, and d15 = 10.2 pC/N, respectively. The readers can obtain these values by the relevant equations [1] using the electromechanical coupling factors in Table 2 and dielectric, elastic constants in Table 3. The authors regret this oversight.
引用
收藏
页码:741 / 741
相关论文
共 50 条
  • [1] Enhanced piezoelectric properties of off-stoichiometric strontium bismuth tantalate Sr0.8Bi2.2Ta2O9 ceramics
    H. Takeda
    C. Fujioka
    R. Aoyagi
    S. Okamura
    T. Shiosaki
    Applied Physics A, 2005, 81 : 131 - 135
  • [2] Enhanced piezoelectric properties of off-stoichiometric strontium bismuth tantalate Sr0.8Bi2.2Ta2O9 ceramics
    Takeda, H
    Fujioka, C
    Aoyagi, R
    Okamura, S
    Shiosaki, T
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (01): : 131 - 135
  • [3] Enhanced piezoelectric properties of off-stoichiometric strontium bismuth tantalate Sr0.8Bi2.2Ta2O9 ceramics (vol 81, pg 131, 2005)
    Takeda, H
    Fujioka, C
    Aoyagi, R
    Okamura, S
    Shiosaki, T
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 82 (04): : 741 - 741
  • [4] Effect of the Sintering Temperature on Nanocrystalline Non-stoichiometric Sr0.8Bi2.2Ta2O9 Ferroelectric Ceramics
    Sugandha
    Jha, A. K.
    FERROELECTRICS, 2014, 459 (01) : 160 - 171
  • [5] Crystal structures and ferroelectric properties of SrBi2Ta2O9 and Sr0.8Bi2.2Ta2O9
    Shimakawa, Y
    Kubo, Y
    Nakagawa, Y
    Kamiyama, T
    Asano, H
    Izumi, F
    APPLIED PHYSICS LETTERS, 1999, 74 (13) : 1904 - 1906
  • [6] Structural and ferroelectric properties of La modified Sr0.8Bi2.2Ta2O9 thin films
    Shi, HF
    Lin, YY
    Hu, GD
    Tang, TA
    MATERIALS RESEARCH BULLETIN, 2005, 40 (09) : 1544 - 1550
  • [7] Preparation and ferroelectric properties of lanthanum modified Sr0.8Bi2.2Ta2O9 thin films
    Zhong, Y
    Hu, GD
    Tang, TA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (12): : 7424 - 7427
  • [8] Ferroelectric Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films
    Bozgeyik, Mehmet S.
    Cross, Jeffrey S.
    Ishiwara, Hiroshi
    Shinozaki, Kazuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (06)
  • [9] Crystal structures of SrBi2Ta2O9 and Sr0.8Bi2.2Ta2O9 ferroelectric materials
    Shimakawa, Y
    Nakagawa, Y
    Kubo, Y
    Kamiyama, T
    Asano, H
    FERROELECTRIC THIN FILMS VII, 1999, 541 : 523 - 528
  • [10] Amorphous Sr0.8Bi2.2Ta2O9 Thin Films for MIM Embedded Capacitors
    Kang, Min-gyu
    Cho, Kwang-hwan
    Lee, Chil-hyoung
    Kang, Chong-yun
    Yoon, Seok-jin
    Kang, Min-Gyu
    Kim, Sang-sig
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (04) : 1062 - 1065