Hybrid Atom-Ion Quantum Gate Engineering

被引：0
|
作者：
Shaposhnikov D. [1 ]
Fedichkin L. [1 ]
机构：
[1] Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow
来源：
Russian Microelectronics | 2023年 / 52卷 / Suppl 1期
关键词：
D O I：
10.1134/S1063739723600437
中图分类号：
学科分类号：
摘要：
Overview of some recent research advancements in ultracold Rydberg atoms with laser-cooled trapped ions control is presented. We show also an effective way to create multi-q-bit gates on such a system. We demonstrate how to implement a gate similar to C-PHASE and discuss the prospects of atom-ion coupling approach. © Pleiades Publishing, Ltd. 2023.
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收藏
页码：S369 / S372
页数：3
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