Growth of ZnO nanorod arrays by sol–gel method: transition from two-dimensional film to one-dimensional nanostructure

被引:0
|
作者
M. W. Zhu
N. Huang
J. Gong
B. Zhang
Z. J. Wang
C. Sun
X. Jiang
机构
[1] Chinese Academy of Sciences,Shenyang National Laboratory for Material Science, Institute of Metal Research
[2] Chinese Academy of Sciences,State Key Laboratory for Corrosion and Protection, Institute of Metal Research
[3] Chinese Academy of Sciences,Institute of Metal Research
[4] University of Siegen,Institute of Materials Engineering
来源
Applied Physics A | 2011年 / 103卷
关键词
Nanorod Array; Nanorod Growth; Schwoebel Barrier; Scanning Electron Micro Morphology;
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中图分类号
学科分类号
摘要
ZnO nanorod arrays were prepared by a sol–gel method in the present work. The effects of doping concentration and annealing time on the morphologies of ZnO:Al (ZAO) layers were investigated to clearly explore the growth process of ZnO nanorods by designing gradient structures and adjusting the annealing time. The results show that the doping level in the films is a key factor for the formation of nanorods and they cannot form at a low doping level. Out-of-plane anisotropic grain growth instead of the traditional in-plane coarsening process is observed with increasing annealing time. The growth model of nanorods is proposed in terms of the surface diffusion and Ehrlich–Schwoebel barrier (ES barrier) theory.
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页码:159 / 166
页数:7
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