Antireflection fianite and ZrO2 coatings for solar cells

被引:1
|
作者
A. N. Buzynin
Yu. N. Buzynin
V. V. Osiko
V. I. Panov
B. N. Zvonkov
I. V. Chinareva
P. E. Khakaushev
M. A. Trishenkov
机构
[1] Russian Academy of Sciences,Prokhorov General Physics Institute
[2] Russian Academy of Sciences,Institute for Physics of Microstructures
[3] Physicotechnical Institute for Scientific Research,undefined
[4] FGUP NPO Orion,undefined
[5] State Scientific Center of the Russian Federation,undefined
[6] Moscow State Institute of Radio Engineering,undefined
[7] Electronics,undefined
[8] and Automation (Technical University),undefined
关键词
GaAs; Solar Cell; Magnetron Sputtering; Reflection Loss; Silicon Solar Cell;
D O I
10.3103/S106287381109005X
中图分类号
学科分类号
摘要
Fianite is a promising multipurpose material for new electronic technologies owing to its unique combination of physical and chemical properties. It can be used in virtually all of the main technological stages of the production of micro-, opto-, and SHF-electronics; in particular, as a bulk dielectric substrate and a material for buffer layers in heteroepitaxy; as a material for insulating, antireflection, and protective layers in device elements; and as a gate dielectric [1–3]. In this work, we consider the possibilities for using fianite and ZrO2 as an antireflection coating for silicon solar cells (SCs) and SCs based on InGaAsP heterostructures.
引用
收藏
页码:1213 / 1216
页数:3
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