High-voltage solid-state switches for microsecond pulse power

被引：0
|
作者：
M. V. Malashin
S. I. Moshkunov
I. E. Rebrov
V. Yu. Khomich
E. A. Shershunova
机构：
[1] Russian Academy of Sciences,Institute for of Electrophysics and Electric Power
来源：
Instruments and Experimental Techniques | 2014年 / 57卷
关键词：
State Duration; Insulate Gate Bipolar Transistor; High Voltage Switch; High Voltage Insulation; High Voltage Module;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A method that controls solid-state insulated gate bipolar transistor (IGBT) switches, allowing one to increase their ON-state duration time from fractions of microseconds up to milliseconds, is proposed. It is shown that the ON-state duration of the switches is limited only by their overheating. The modular design of the high-voltage solid-state switch with a 16-kV operating voltage and 60-A pulse current is experimentally implemented.
引用
收藏
页码：140 / 143
页数：3
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