Electrical degradation mechanisms of nanoscale charge trap flash memories due to trapped charge in the oxide layer

被引：0
|
作者：
Kyoung Wook Koh
Dong Hun Kim
Ju Tae Ryu
Tae Whan Kim
Keon-Ho Yoo
机构：
[1] Hanyang University,Department of Electronics and Computer Engineering
[2] Kyung Hee University,Department of Physics and Research Institute for Basic Sciences
来源：
Journal of the Korean Physical Society | 2015年 / 67卷
关键词：
SONOS; Fixed charge; Threshold voltage shift; CTF degradation; RTN;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The deterioration of the electrical characteristics of charge trap flash (CTF) memories with a silicon-oxide-nitride-oxide-silicon (SONOS) structure due to the charge traps in the oxide layers attributed to the random trapping and detrapping processes was investigated. Simulation results for the CTF memories showed that the threshold voltage shift was decreased by the charge trapped in the oxide layers in the SONOS structure and that the charge trapped in the blocking oxide had more significant effects than that trapped in the tunneling oxide. The degradation effects of the charge trapped in the blocking oxide on the electrical characteristics of the CTF memories were clarified by examining the vertical electric field in the device.
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页码：533 / 536
页数：3
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