Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate

被引：0
|
作者：
Yu. V. Trushin
E. E. Zhurkin
K. L. Safonov
A. A. Schmidt
V. S. Kharlamov
S. A. Korolev
M. N. Lubov
J. Pezoldt
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] St. Petersburg State Technical University,Zentrum für Mikro
[3] TU Ilmenau,und Nanotechnologien
来源：
Technical Physics Letters | 2004年 / 30卷
关键词：
Silicon; Carbide; Silicon Carbide; Silicon Substrate; Molecular Beam Epitaxy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The growth of silicon carbide (SiC) nanoclusters by molecular beam epitaxy on silicon substrates has been studied using a combination of experimental and theoretical methods. The first results concerning the initial stages of this growth are presented.
引用
收藏
页码：641 / 643
页数：2
相关论文
共 50 条
  • [1] Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate
    Trushin, YV
    Zhurkin, EE
    Safonov, KL
    Schmidt, AA
    Kharlamov, VS
    Korolev, SA
    Lubov, MN
    Pezoldt, J
    TECHNICAL PHYSICS LETTERS, 2004, 30 (08) : 641 - 643
  • [2] INITIAL-STAGES OF THE EPITAXIAL SILICON-CARBIDE FILM GROWTH ON SILICON SUBSTRATES
    BEREZHINSKII, LI
    VLASKINA, SI
    RODIONOV, VE
    SHAMURATOV, HA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 116 (02): : K169 - &
  • [3] INITIAL GROWTH-STAGES OF EPITAXIAL SILICON-CARBIDE FILMS ON SILICON SUBSTRATES
    BEREZHINSKY, LI
    VLASKINA, SI
    RODIONOV, VE
    SVECHNIKOV, SV
    SHAMURATOV, HA
    UKRAINSKII FIZICHESKII ZHURNAL, 1989, 34 (09): : 1404 - 1409
  • [4] Effect of initial substrate conditions on growth of cubic silicon carbide
    Vasiliauskas, R.
    Marinova, M.
    Syvajarvi, M.
    Liljedahl, R.
    Zoulis, G.
    Lorenzzi, J.
    Ferro, G.
    Juillaguet, S.
    Camassel, J.
    Polychroniadis, E. K.
    Yakimova, R.
    JOURNAL OF CRYSTAL GROWTH, 2011, 324 (01) : 7 - 14
  • [5] Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate
    A. V. Tumarkin
    I. T. Serenkov
    V. I. Sakharov
    S. V. Razumov
    A. A. Odinets
    M. V. Zlygostov
    E. N. Sapego
    V. V. Afrosimov
    Physics of the Solid State, 2017, 59 : 2374 - 2380
  • [6] Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate
    Tumarkin, A. V.
    Serenkov, I. T.
    Sakharov, V. I.
    Razumov, S. V.
    Odinets, A. A.
    Zlygostov, M. V.
    Sapego, E. N.
    Afrosimov, V. V.
    PHYSICS OF THE SOLID STATE, 2017, 59 (12) : 2374 - 2380
  • [7] MBE growth of ZnSe nanowires on oxidized silicon substrate
    Hsiao, C. H.
    Chang, S. J.
    Wang, S. B.
    Hung, S. C.
    Chang, S. P.
    Li, T. C.
    Lin, W. J.
    Huang, B. R.
    SUPERLATTICES AND MICROSTRUCTURES, 2009, 46 (04) : 572 - 577
  • [8] Initial stages of the formation of a fullerene film on a silicon substrate
    Phys Solid State, 10 (1722):
  • [9] Photoluminescence of the silicon carbide nanoclusters embeded into porous silicon
    Rozhin, AG
    Klyui, NI
    Litovchenko, VG
    Piryatinskii, YP
    Makara, VA
    Korneta, OB
    PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001, 2001, : 168 - 171
  • [10] Initial stages of the GaN growth on oxidized silicon
    V. N. Bessolov
    Yu. V. Zhilyaev
    E. V. Konenkova
    S. A. Kukushkin
    A. V. Luk’yanov
    S. D. Raevskii
    V. A. Fedirko
    Technical Physics Letters, 2001, 27 : 1010 - 1012
12345