Determining the Free Carrier Density in CdxHg1–xTe Solid Solutions from Far-Infrared Reflection Spectra

被引：0
|
作者：
A. G. Belov
I. A. Denisov
V. E. Kanevskii
N. V. Pashkova
A. P. Lysenko
机构：
[1] AO State Scientific Research and Design Institute of Rare Metal Industry “Giredmet”,
[2] National Research University “Higher School of Economics”,undefined
来源：
Semiconductors | 2017年 / 51卷
关键词：
reflection spectra; Cd; Hg; Te solid solutions; determination of the free carrier density; plasmonphonon interaction;
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摘要：
A new contactless nondestructive technique for determining the free carrier density in single-crystal samples of CdxHg1–xTe solid solutions and multilayer epitaxial heterostructures based on them from farinfrared reflection spectra is proposed. The characteristic point and corresponding wavenumber in the room-temperature spectral dependence of the reflectance are determined. The heavy hole density is established using calculated calibration curves. It is shown that in constructing the calibration curves, it is necessary to take into account the interaction of plasma oscillations with longitudinal optical phonons.
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页码：1732 / 1736
页数：4
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