In situ transmission electron microscopy observations of the crystallization of amorphous Ge films

被引：0
|
作者：
Z. H. Cao
P. Liu
X. K. Meng
S. C. Tang
H. M. Lu
机构：
[1] Nanjing University,National Laboratory of Solid State Microstructures and Department of Material Science and Engineering
来源：
Applied Physics A | 2009年 / 94卷
关键词：
68.37.Lp; 68.55.A-; 68.60.Dv; 71.55.Cn; 78.67.Bf;
D O I：
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学科分类号：
摘要：
The crystallization of amorphous Ge films has been studied as a function of annealing temperature between 400 and 700°C by in situ transmission electron microscopy (TEM). It is found that crystallization does not occur until the annealing temperature reaches 650°C, which is nearly 250°C higher than the crystallization temperature in previous reports. The high crystallization temperature and average crystal size obtained by in situ TEM are in agreement with those from Raman spectroscopy and X-ray diffraction measurement. The kinetics analysis indicates that homogeneous nucleation is the dominant crystallization mode and the activation energy is up to about 3.1 eV.
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页码：393 / 398
页数：5
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