Integrated all-photonic non-volatile multi-level memory

被引：3
|
作者：
Carlos Ríos
Matthias Stegmaier
Peiman Hosseini
Di Wang
Torsten Scherer
C. David Wright
Harish Bhaskaran
Wolfram H. P. Pernice
机构：
[1] University of Oxford,Department of Materials
[2] Parks Road,Department of Engineering
[3] Institute of Nanotechnology,undefined
[4] Karlsruhe Institute of Technology (KIT),undefined
[5] Hermann-von-Helmholtz-Platz 1,undefined
[6] Karlsruhe Nano Micro Facility (KNMF),undefined
[7] Karlsruhe Institute of Technology (KIT),undefined
[8] Hermann-von-Helmholtz-Platz 1,undefined
[9] University of Exeter,undefined
[10] Institute of Physics,undefined
[11] University of Muenster,undefined
来源：
Nature Photonics | 2015年 / 9卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Researchers use phase-change materials to demonstrate an integrated optical memory with 13.4 pJ switching energy.
引用
收藏
页码：725 / 732
页数：7
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