A new field-assisted annealing approach for advanced Cu-Zr Alloy metallization

A new field-assisted annealing approach for Cu-Zr alloy metallization is proposed and investigated. Cu-Zr/SiO2/Si samples were vacuum-annealed at pressure of 2 × 10−3 Pa with (−20 V) and without field-assisted annealing for an hour in 250°C–400°C temperature range. Based on the XRD, TEM, XPS, and resistivity measurement results, we conclude that the dragging force for Zr atoms in field-assisted annealing samples to the interface shall be larger than that of samples without field-assisted annealing. As a consequence, by low concentration alloy atoms adding and FAA processing, the low Cu alloy film resistivity and thin self-forming barrier layer can be simultaneously obtained at lower temperature.