Surface-barrier In/p-CuGa3Te5 and In/p-CuGa5Te8 structures: Fabrication and properties

被引:0
|
作者
V. Yu. Rud’
Yu. V. Rud’
I. V. Bodnar’
机构
[1] St. Petersburg State Technical University,Ioffe Physicotechnical Institute
[2] Russian Academy of Sciences,undefined
[3] Belarussian State University of Informatics and Radioelectronics,undefined
来源
Semiconductors | 2006年 / 40卷
关键词
72.40.+v; 73.30.+y; 85.60.Gz;
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学科分类号
摘要
Single crystals of the ternary CuGa3Te5 and CuGa5Te8 ternary compounds are grown and their properties are studied. The photosensitive In/p-CuGa3Te5 and In/p-CuGa5Te8 structures were formed on homogeneous crystals for the first time. Photoelectric properties of new structures were studied and the parameters of the structures and of new semiconductors were determined; it is concluded that these structures can be used in broadband photoconverters of nonpolarized radiation.
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页码:1028 / 1035
页数:7
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