Transverse Nernst-Ettingshausen effect in HgSe:Fe,Ga crystals containing mixed-valence iron impurities

被引：0
|
作者：
I. G. Kuleev
A. T. Lonchakov
G. L. Shtrapenin
I. Yu. Arapova
机构：
[1] Ural Branch of the Russian Academy of Sciences,Institute of Metal Physics
来源：
Physics of the Solid State | 1997年 / 39卷
关键词：
Iron; Spectroscopy; Experimental Data; State Physics; Gallium;
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学科分类号：
摘要：
The transverse Nernst-Ettingshausen effect is investigated experimentally and theoretically for HgSe:Fe,Ga samples with various iron and gallium impurity contents. It is shown that the unusual dependence of the magnitude and sign of the effect on the gallium impurity content are attributable to their influence on the degree of spatial ordering of the trivalent iron ions and, accordingly, on the nature of the scattering of conduction electrons. The results of the calculations agree qualitatively with the experimental data.
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页码：1575 / 1581
页数：6
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