Monte Carlo simulation of possible conversion processes with respect to soft error generation in a dynamic RAM based neutron detector

The operating principle of a memory based radiation sensor, which is the Soft Error mechanism in silicon integrated circuits was suggested in our research with particular reference to dynamic Random Access Memories (dRAMs), with a view of employing it in neutron detection, imaging and elemental analysis. Thus, having initially proved that dRAMs can be used as heavy charged particle detectors, it was thought that these devices can be made sensitive to neutrons by adding a foil to convert the thermal neutrons to charged particles through the (n,α) reaction. In order to further evaluate the feasibility of this approach, a Monte Carlo program has been used to simulate and examine suitable converting materials with respect to soft error generation and to determine methods to increase the sensitivity of dRAMs to neutrons. The aim of this paper is to present results from these calculations and discuss the capabilities of such a neutron detector.