Structural characteristics of multicomponent GaAs-InxGa1-xAs system from double-crystal X-ray diffractometry data

被引：0
|
作者：
A. M. Afanas’ev
M. A. Chuev
R. M. Imamov
A. A. Lomov
机构：
[1] Russian Academy of Sciences,Institute of Physics and Technology
[2] Russian Academy of Sciences,Shubnikov Institute of Crystallography
来源：
Crystallography Reports | 2000年 / 45卷
关键词：
Reflection; Structural Characteristic; Incident Beam; Experimental Diffraction; Reflection Curve;
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学科分类号：
摘要：
The article continues a series of publications on the technologically important multilayer InxGa1-xAs-GaAs/GaAs system with the 3-, 6-, and 9 nm-thick layers (quantum wells). The collimation system of the incident beam is improved. The dimensions of quantum wells and the interfaces between these wells are determined. The qualitative picture of quantum well “spreading” is described. The experimental diffraction reflection curves are measured from three different parts of the specimen. Their analysis shows how homogeneous the structure grown is.
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页码：655 / 660
页数：5
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