Growth characteristics and physical properties of PbTe/BaF2 prepared under nonequilibrium conditions

被引：0
|
作者：
S. V. Plyatsko
机构：
[1] Ukrainian National Academy of Sciences,Institute of Semiconductor Physics
来源：
Semiconductors | 1998年 / 32卷
关键词：
Microscopy; Structural Property; Magnetic Material; Electromagnetism; Growth Characteristic;
D O I：
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中图分类号：
学科分类号：
摘要：
PbTe/BaF2 films were grown under nonequilibrium conditions by laser-modulated epitaxy. The structural properties of the layers were investigated by x-ray crystallographic methods and scanning tunneling microscopy. It was established that the films obtained under nonequilibrium conditions on (III)BaF2 substrates are granular (d⩽250 Å) with (001) orientation. The electrophysical and photoelectric properties of the films depend on the technological conditions of growth and are determined by states at intergrain boundaries.
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页码：231 / 234
页数：3
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