Photoluminescence characteristics of 1.5-μm Ga1-xInxNyAs1-y/GaAs structures grown by molecular beam epitaxy

被引：0
|
作者：
H.D. Sun
S. Calvez
M.D. Dawson
P. Gilet
L. Grenouillet
A. Million
机构：
[1] University of Strathclyde,Institute of Photonics
[2] CEA-Grenoble,LETI
来源：
Applied Physics A | 2005年 / 80卷
关键词：
Thin Film; GaAs; Operating Procedure; Electronic Material; Excitation Wavelength;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-μm wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-μm material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 μm. The related radiative mechanisms in the 1.5-μm samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.
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页码：9 / 12
页数：3
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