Effect of Various Parameters on the Shear Strength of Solid-State Nanoporous Cu Bonding in Cu–Cu Disks for Power Device Packaging

被引:0
|
作者
Byungho Park
Duy Le Han
Mikiko Saito
Jun Mizuno
Hiroshi Nishikawa
机构
[1] Osaka University,Joining and Welding Research Institute
[2] Osaka University,Graduate School of Engineering
[3] Waseda University,Research Organization for Nano and Life Innovation
[4] Hanoi University of Science and Technology,Department of Welding Engineering and Metals Technology, School of Mechanical Engineering
来源
关键词
Nanoporous Cu; die attach; power device; bonding; diffusion;
D O I
暂无
中图分类号
学科分类号
摘要
Nanoparticle sintering is considered a promising alternative bonding method to Pb-based soldering for the attachment of components in high-temperature electronic devices. However, the technology still poses certain challenges, such as the difficulty in controlling the joint thickness and the generation of voids owing to solvent evaporation. In this study, a solid-state (solvent-free), nanoporous-Cu (NPC) bonding method was examined. The purpose of this study was to find the effect of the bonding temperature (200–400°C) and atmosphere (N2 or formic acid) on the shear strength of the joints formed between the NPC sheets and bare Cu disks for the replacement of the Pb–5Sn solder joint for high-temperature applications (> 300°C). The NPC/Cu joints were investigated by scanning electron microscopy, x-ray diffraction, and transmission electron microscopy. It was shown that the bondability of NPC under a N2 atmosphere is closely related to the oxide layer formed on the NPC surface that impairs the diffusion of Cu atoms between the NPC and Cu substrate. Furthermore, the densification of the NPC microstructure under a formic acid atmosphere at ≥ 350°C owing to the rapid diffusion of Cu atoms and accompanying plastic deformation induced by surface stress enhances the shear strength of the resulting NPC/Cu joint. The shear strength of the NPC/Cu joints formed under a formic acid atmosphere increased from 14.1 MPa to 35.9 MPa with an increasing bonding temperature. These results suggest that the NPC/Cu joints are a good alternative to Pb–5Sn solder joints. Based on the results of the investigation, a mechanism was proposed to explain the superiority of the Cu–Cu joints achieved using this method.
引用
收藏
页码:3851 / 3862
页数:11
相关论文
共 50 条
  • [1] Effect of Various Parameters on the Shear Strength of Solid-State Nanoporous Cu Bonding in Cu-Cu Disks for Power Device Packaging
    Park, Byungho
    Duy Le Han
    Saito, Mikiko
    Mizuno, Jun
    Nishikawa, Hiroshi
    JOURNAL OF ELECTRONIC MATERIALS, 2022, 51 (07) : 3851 - 3862
  • [2] The effect of solid-state nanoporous Cu bonding for power device
    Park, Byungho
    le Han, Duy
    Saito, Mikiko
    Mizuno, Jun
    Nishikawa, Hiroshi
    2021 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2021), 2021, : 159 - 160
  • [3] Robust shear strength of Cu-Au joint on Au surface-finished Cu disks by solid-state nanoporous Cu bonding
    Park, Byungho
    Saito, Mikiko
    Mizuno, Jun
    Nishikawa, Hiroshi
    MICROELECTRONIC ENGINEERING, 2022, 260
  • [4] Molecular Dynamics Simulation of Cu-Cu Solid-State Bonding under Various Bonding Parameters
    Tatsumi, Hiroaki
    Kao, C.R.
    Nishikawa, Hiroshi
    2023 International Conference on Electronics Packaging, ICEP 2023, 2023, : 149 - 150
  • [5] Effects of the Nanoporous Cu Interlayer on the Bonding Area and Strength for Applications in Packaging of High Power Devices
    Lu, Wan-Hsin
    Chen, Chih
    2024 International Conference on Electronics Packaging, ICEP 2024, 2024, : 53 - 54
  • [6] QUANTITATIVE ESTIMATION OF CONDITIONS FOR SOLID-STATE BONDING OF CU
    KAWANA, T
    AMIMOTO, T
    KURAHASHI, K
    ARAI, T
    INTERNATIONAL JOURNAL OF THE JAPAN SOCIETY FOR PRECISION ENGINEERING, 1995, 29 (02): : 117 - 122
  • [7] Atomistic behavior of Cu-Cu solid-state bonding in polycrystalline Cu with high-density boundaries
    Tatsumi, Hiroaki
    Kao, C. R.
    Nishikawa, Hiroshi
    MATERIALS & DESIGN, 2025, 250
  • [8] A low-temperature bonding method for high power device packaging based on In-infiltrated nanoporous Cu
    Chunjin Hang
    Jiahao Liu
    Jianqiang Wang
    Xing Fu
    Hongtao Chen
    Mingyu Li
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 14157 - 14164
  • [9] A low-temperature bonding method for high power device packaging based on In-infiltrated nanoporous Cu
    Hang, Chunjin
    Liu, Jiahao
    Wang, Jianqiang
    Fu, Xing
    Chen, Hongtao
    Li, Mingyu
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (17) : 14157 - 14164
  • [10] Impact of crystalline orientation on Cu–Cu solid-state bonding behavior by molecular dynamics simulations
    Hiroaki Tatsumi
    C. R. Kao
    Hiroshi Nishikawa
    Scientific Reports, 13