Anisotropic magnetoresistive sensors of the magnetic field and current

被引：0
|
作者：
S. I. Kasatkin
A. M. Murav’ev
N. V. Plotnikova
V. V. Amelichev
A. I. Galushkov
I. A. Gamarts
V. V. Lopatin
A. N. Saurov
机构：
[1] Russian Academy of Sciences,Trapeznikov Institute of Control Sciences
[2] Moscow Institute of Electronic Technology (MIET),Scientific
来源：
Automation and Remote Control | 2009年 / 70卷
关键词：
42.81.Pa;
D O I：
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中图分类号：
学科分类号：
摘要：
Results are presented of the work in the domain of investigation and production of thin-filmed anisotropic magnetoresistive sensors (AMRSs) of the magnetic field and current on the basis of the single-layer or the double-layer metallic ferromagnetic nanostructure with a thickness of the magnetic film of 12–25 nm. The problems of design of the AMRS structures and their efficiency are considered with the investigation of the basic characteristics and technology of their production.
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页码：1043 / 1053
页数：10
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