Compensation mechanism for hole conduction in ZnO:N films

被引：0
|
作者：
I. V. Rogozin
A. N. Georgobiani
M. B. Kotlyarevsky
A. V. Marakhovskii
机构：
[1] Berdyansk State Pedagogical University,Lebedev Institute of Physics
[2] Russian Academy of Sciences,undefined
[3] Academy of Management and Information Technologies,undefined
来源：
Inorganic Materials | 2009年 / 45卷
关键词：
Electron Paramagnetic Resonance; ZnSe; Matter Mater; Defect Complex; Hole Conduction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
One possible compensation mechanism for hole conduction in ZnO:N crystals has been examined using the quasi-chemical approach. The results indicate that, under equilibrium annealing or growth conditions, p-type ZnO:N crystals are difficult to obtain because holes are compensated by VO vacancies and (VO − NO)· defect complexes. The theoretical predictions correlate with experimental data.
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页码：391 / 398
页数：7
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