Growth mechanism of CdS film prepared by chemical bath deposition

被引:0
|
作者
Xing-Yu Peng
Hong-Wei Gu
Teng Zhang
Fa-Zhu Ding
Fei Qu
Hong-Yan Wang
机构
[1] Chinese Academy of Sciences,Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering
[2] University of Chinese Academy of Sciences,undefined
来源
Rare Metals | 2014年 / 33卷
关键词
CdS; Chemical bath deposition; Ammonia concentration; Growth mechanism;
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中图分类号
学科分类号
摘要
In this paper, sodium citrate was adopted as a complexing agent and ammonia merely served as pH adjustor to investigate the growth mechanism of CdS film. The growth rate, structural properties, surface morphology, microstructure, and optical properties of CdS films were studied by profilometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and spectrophotometer, respectively. The SEM images show that CdS films prepared with higher ammonia concentration have lower nucleation density on substrate. SEM and EDS results show that the formation of Cd(OH)2 is not required in the growth of CdS film. As the ammonia concentration increases, the sites that previously adsorbed S2− are taken by OH− which leads to lower S2− density on substrate. CdS film forms through direct reaction of Cd2+ with the S2− which are adsorbed on the substrate. Lower S2− density on the substrate results in the decrease of particle density on the substrate. The as-deposited CdS films have relatively high-average transmittance (~80 %) in the wavelength range from 500 to 1,000 nm which makes them suitable to be used in solar cell.
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页码:324 / 329
页数:5
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