Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films

被引：12
|
作者：
Muradkabilov D.M. [1 ]
Tashmukhamedova D.A. [1 ]
Umirzakov B.E. [1 ]
机构：
[1] Abu Rayhan al-Biruni Tashkent State Technical University, Tashkent
来源：
Muradkabilov, D. M. | 1600年 / Izdatel'stvo Nauka卷 / 07期
关键词：
Ion implantation;
D O I：
10.1134/S1027451013050376
中图分类号：
学科分类号：
摘要：
A new way for obtaining nanocontacts on the surface of semiconductors using Si (111) thin films as an example is proposed. The essence of the method lies in the fact that, first, cobalt-silicide nanofilms with a thickness of 45-50 Å are formed by ion implantation in combination with annealing; then, atoms of the contact metal (Al) are sputtered. The specific resistance of the CoSi2nanofilms is (2-3) × 10-5Ω × cm. © 2013 Pleiades Publishing, Ltd.
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页码：967 / 971
页数：4
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