Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures

The effect of annealing in argon and oxygen plasma on the I–V characteristics and photoresponse of TiO2–Si structures is investigated. The titanium oxide films are prepared by rf magnetron sputtering onto n-Si substrates. The observed features in the behavior of the electrical and photoelectric characteristics of the samples after annealing and treatment in oxygen plasma are attributed to a variation in the phase composition of the oxide film due to the appearance of anatase or rutile crystallites, depending on the treatment conditions.