Modeling of a compressively strained quantum well laser based on InxGa1−xSb/GaSb and emitting at 2 μm

被引：0

作者：

S. Dehimi

L. Dehimi

B. Mebarki

F. Pezzimenti

机构：

[1] Research Center in Industrial Technologies (CRTI ex CSC),Faculty of Science

[2] University of Batna1,Laboratory of Metallic and Semiconductor Materials (LMSM)

[3] University Biskra,undefined

[4] Higher School of Industrial Technologies,undefined

[5] DIIES – Mediterranea University of Reggio Calabria,undefined

来源：

Journal of Computational Electronics | 2021年 / 20卷

关键词：

InGaSb; Laser diode; Quantum well; Optical gain; Threshold current;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This work deals with the modeling and simulation of quantum well lasers based on a heterostructure formed by indium gallium antimonide (InGaSb) and gallium antimonide (GaSb). The objective is to study the feasibility of a laser operating continuously in the near infrared for applications in the detection of polluting gases. Important device parameters such as the optical gain and threshold current density are investigated in detail. The results show that the optical gain is close to 4000 cm−1 and tends to increase with the carrier density in the active region but decreases with temperature and the quantum well thickness. The dependence of the laser threshold current density on the optical losses and temperature is also evaluated.

引用

页码：426 / 432

页数：6

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