Development of ion-beam technique for manufacturing silicon nanowires

被引：2

作者：

Gurovich B.A. ^{[1
]}

Prikhod'ko K.E. ^{[1
]}

Taldenkov A.N. ^{[1
]}

Yakubovskii A.Y. ^{[1
]}

Maslakov K.I. ^{[1
]}

Komarov D.A. ^{[1
]}

Kutuzov L.V. ^{[1
]}

Fedorov G.E. ^{[1
]}

机构：

[1] National Research Center Kurchatov Institute, pl. Akademika Kurchatova 1

来源：

Taldenkov, A. N. (taldenkov@imp.kiae.ru) | 1600年 / Maik Nauka-Interperiodica Publishing卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

Nanowires;

D O I：

10.1134/S1995078012010090

中图分类号：

学科分类号：

摘要：

A new technique for manufacturing silicon nanowires on the surface of a conventional silicon wafer using ion-beam irradiation through a lithographic mask has been proposed. The conditions needed for synthesizing silicon oxide using the irradiation of the silicon substrate by protons with an energy of about 1 keV have been studied. The possibility of synthesizing silicon oxide in the region of the geometric shadow under the monocrystalline silicon nanowire has been demonstrated. © 2012 Pleiades Publishing, Ltd.

引用

页码：93 / 97

页数：4

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