Emergent properties at oxide interfaces controlled by ferroelectric polarization

被引：0
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作者：
Fan Ye
Yi Zhang
Christopher Addiego
Mingjie Xu
Huaixun Huyan
Xiaobing Ren
Xiaoqing Pan
机构：
[1] Xi’an Jiaotong University,Frontier Institute of Science and Technology
[2] University of California,Materials Science and Engineering
[3] Sun Yat Sen University,School of Physics
[4] University of California,Department of Physics and Astronomy
[5] University of California,Irvine Materials Research Institute
[6] Center for Functional Materials,undefined
[7] National Institute for Materials Science,undefined
来源：
npj Computational Materials | / 7卷
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摘要：
Ferroelectric materials are characterized by the spontaneous polarization switchable by the applied fields, which can act as a “gate” to control various properties of ferroelectric/insulator interfaces. Here we review the recent studies on the modulation of oxide hetero-/homo-interfaces by ferroelectric polarization. We discuss the potential applications of recently developed four-dimensional scanning transmission electron microscopy and how it can provide insights into the fundamental understanding of ferroelectric polarization-induced phenomena and stimulate future computational studies. Finally, we give the outlook for the potentials, the challenges, and the opportunities for the contribution of materials computation to future progress in the area.
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