Nanofabrication on unconventional substrates using transferred hard masks

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作者
Luozhou Li
Igal Bayn
Ming Lu
Chang-Yong Nam
Tim Schröder
Aaron Stein
Nicholas C. Harris
Dirk Englund
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[1] Massachusetts Institute of Technology,Department of Electrical Engineering and Computer Science
[2] Center for Functional Nanomaterials,undefined
[3] Brookhaven National Laboratory,undefined
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A major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off and ion implantation are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.
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