Investigation of the Hardness and Young’s Modulus in Thin Near-Surface Layers of Silicon Carbide from the Si- and C-Faces by Nanoindentation

被引：0
|
作者：
A. V. Osipov
A. S. Grashchenko
A. N. Gorlyak
A. O. Lebedev
V. V. Luchinin
A. V. Markov
M. F. Panov
S. A. Kukushkin
机构：
[1] Institute of Problems of Mechanical Engineering,
[2] Russian Academy of Sciences,undefined
[3] St. Petersburg Electrotechnical University “LETI,undefined
[4] Ioffe Physical Technical Institute,undefined
[5] Information Technologies,undefined
[6] Mechanics,undefined
[7] and Optics University (ITMO University),undefined
来源：
Technical Physics Letters | 2020年 / 46卷
关键词：
nanoindentation; silicon carbide; hardness; interfacial energy.;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：763 / 766
页数：3
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