Vibrational properties of Cu3XY4 sulvanites (X = Nb, Ta, and V; and Y = S, and Se) by ab initio molecular dynamics

被引:0
|
作者
Joaquín Peralta
Camilo Valencia-Balvín
机构
[1] Departamento de Física,
[2] Facultad de Ciencias Exactas,undefined
[3] Universidad Andres Bello,undefined
[4] Instituto Tecnológico Metropolitano ITM,undefined
来源
关键词
Solid State and Materials;
D O I
暂无
中图分类号
学科分类号
摘要
In this work, we present a structural and dynamic characterisation of six different types of sulvanites Cu3XY4 with X = Nb, V and Ta, and Y = S and Se. These materials have been the subject of intense study in recent times primarily as potential candidates for solar cell devices, as well as for their enhanced opto-electrical properties. Here, by means of first-principles calculations, we study the structural and dynamic behaviour of these materials at different temperatures, which is important for use of these materials in high-temperature conditions. In this work the dynamic and structural properties are studied using the Density Functional Theory technique. The simulations were performed at four different temperatures, ranging from room temperature to ~1500 K. By using first-principles molecular dynamics in the microcanonical ensemble, we are able to determine the vibrational spectra of these sulvanites. With this information we report for the first time the partial vibrational density of states of these structures at different temperatures. With these results we determine the vibrational properties of the basic building blocks of those sulvanites and their dynamic behaviour under temperature effects. We also show that the building blocks that which make up these structures, remain stable as the temperature increases.
引用
收藏
相关论文
共 50 条
  • [1] Vibrational properties of Cu3XY4 sulvanites (X = Nb, Ta, and V; and Y = S, and Se) by ab initio molecular dynamics
    Peralta, Joaquin
    Valencia-Balvin, Camilo
    EUROPEAN PHYSICAL JOURNAL B, 2017, 90 (09):
  • [2] Structural, elastic, electronic and optical properties of Cu3MTe4 (M=Nb, Ta) sulvanites: An ab initio study
    Ali, M. A.
    Roknuzzaman, M.
    Nasir, M. T.
    Islam, A. K. M. A.
    Naqib, S. H.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2016, 30 (16):
  • [3] PIEZOELECTRIC PROPERTIES OF TL3BX4 CRYSTALS (B = V,NB,TA X = S,SE)
    MALEKI, H
    BUCK, P
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1993, 207 : 103 - 109
  • [4] Importance of cluster distortions in the tetrahedral cluster compounds GaM4X8 (M=Mo,V,Nb,Ta; X=S,Se):: Ab initio investigations
    Sieberer, M.
    Turnovszky, S.
    Redinger, J.
    Mohn, P.
    PHYSICAL REVIEW B, 2007, 76 (21):
  • [5] ELECTRICAL-PROPERTIES OF TL3BX4 CRYSTALS (B=V, NB, TA, X=S, SE)
    WACKER, K
    BUCK, P
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1985, 172 (1-2): : 121 - 127
  • [6] The Thermal Stability of Janus Monolayers SnXY (X, Y = O, S, Se): Ab-Initio Molecular Dynamics and Beyond
    Luo, Yufeng
    Han, Shihao
    Hu, Rui
    Yuan, Hongmei
    Jiao, Wenyan
    Liu, Huijun
    NANOMATERIALS, 2022, 12 (01)
  • [7] SUPERCONDUCTIVITY IN NB CLUSTER COMPOUNDS NB3(X,Y)4 WITH X,Y=S,SE,TE
    AMBERGER, E
    POLBORN, K
    GRIMM, P
    DIETRICH, M
    OBST, B
    SOLID STATE COMMUNICATIONS, 1978, 26 (12) : 943 - 947
  • [8] Single Crystal X-ray Structure of Cu3TaSe4 and a Comparative Study of Cu3MX4 (M = V, Nb, Ta; X = S, Se, Te)
    Ali, Sk Imran
    van Smaalen, Sander
    ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 2014, 640 (05): : 931 - 934
  • [9] Solidlike to liquidlike behavior of Cu diffusion in superionic Cu2X (X = S, Se): An inelastic neutron scattering and ab initio molecular dynamics investigation
    Kumar, Sajan
    Gupta, M. K.
    Goel, Prabhatasree
    Mittal, R.
    Delaire, Olivier
    Thamizhavel, A.
    Rols, S.
    Chaplot, S. L.
    PHYSICAL REVIEW MATERIALS, 2022, 6 (05)
  • [10] Ab Initio Investigation of the Structural, Electronic and Optical Properties of the Li2In2XY6 (X = Si, Ge; Y = S, Se) Compounds
    Wong, Kin Mun
    Khan, Wilayat
    Shoaib, M.
    Shah, Umar
    Khan, Shah Haider
    Murtaza, G.
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (01) : 566 - 576