In this paper, the performance of a junctionless carbon nanotube field-effect diode in the presence of electron–phonon scattering is examined. A self-consistent mode-space simulation approach based on non-equilibrium Green’s function is used. We have studied the influence of incoherent transport on electrical characteristics such as on-current (ION\documentclass[12pt]{minimal}
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\begin{document}$${I}_{\mathrm{ON}}$$\end{document}), off-current (IOFF\documentclass[12pt]{minimal}
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\begin{document}$${I}_{\mathrm{OFF}}$$\end{document}), on/off current ratio (ION/IOFF), intrinsic delay (τ), energy-delay product, and sub-threshold power dissipation (SPD\documentclass[12pt]{minimal}
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\begin{document}$$\mathrm{SPD}$$\end{document}) at various gate lengths. We have shown that phonon-assisted tunneling dominates the band-to-band tunneling regime under off-state conditions. Therefore, this phenomenon deteriorates IOFF\documentclass[12pt]{minimal}
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\begin{document}$${I}_{\mathrm{OFF}}$$\end{document} and, as a result, SPD\documentclass[12pt]{minimal}
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\begin{document}$$\mathrm{SPD}$$\end{document}. Furthermore, the scattering results in an increase in the intrinsic delay and energy consumed per switching event. Finally, in the on-state, acoustic phonons interaction is the overriding scattering mechanism and causes about a 35% reduction in ION\documentclass[12pt]{minimal}
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\begin{document}$${I}_{\mathrm{ON}}$$\end{document}.