Donor impurities and DX centers in the ionic semiconductor CdF2

被引：0
|
作者：
A. I. Ryskin
P. P. Fedorov
机构：
[1] S. I. Vavilov State Optical Institute,A. V. Shubnikov Institute of Crystallography
[2] Russian Academy of Sciences,undefined
来源：
Physics of the Solid State | 1997年 / 39卷
关键词：
Donor State; Lattice Relaxation; Donor Impurity; CdF2; Complete Analog;
D O I：
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学科分类号：
摘要：
Group-III impurities in the wide-gap ionic crystal CdF2 are examined. After being heated in a reducing atmosphere, crystals with these impurities acquire semiconductor properties, which are determined by electrons bound in hydrogen-like orbitals near an impurity. Besides these donor states, nontransition impurities form “deep” states accompanied by strong lattice relaxation, i.e. they are strongly shifted along the configuration coordinate. These states are a complete analog of DX centers in covalent and ionic-covalent semiconductors. The difference of the behavior of nontransition impurities from that of transition and rare-earth impurities is analyzed. This difference is attributed to the character of the filling of their valence shells by electrons. A deep, multilevel analogy is drawn between the properties of deep centers in typical semiconductors with an appreciable fraction of a covalent bond component and in predominantly ionic crystal CdF2 with semiconductor properties.
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页码：943 / 947
页数：4
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