Hopping conductivity-mediated O-shaped memory behaviour in gelatin–graphene oxide composite films

被引：0

作者：

Sreedevi Vallabhapurapu

Ashwini Rohom

N. B. Chaure

C. Tu

S. Du

V. V. Srinivasu

Ananthakrishnan Srinivasan

机构：

[1] University of South Africa,School of Computing

[2] Tshwane University of Technology,Computer Systems Engineering, Faculty of Information and Communication Technology

[3] Savitribai Phule Pune University,Department of Physics

[4] Tshwane University of Technology,Department of Electrical Engineering, Faculty of Commerce and Built Environment

[5] University of South Africa,Department of Physics

[6] Indian Institute of Technology Guwahati,Department of Physics

来源：

Applied Physics A | 2018年 / 124卷

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摘要：

Gelatin–graphene oxide composite films were prepared by spin coating graphene oxide (GO) dispersed in type-A gelatin on indium tin oxide (ITO) substrates. Current–voltage (I–V) characteristics of the composite film with Al as top electrode and ITO as bottom electrode, exhibited O-shaped memory behaviour. The influence of GO in the observed phenomenon was validated, when the I–V characteristics of pristine type-A gelatin film did not show any memory behaviour. Analysis of the forward and reverse I–V data leading to the ON and OFF states, respectively, revealed hopping type of conduction mechanism. We propose that formation and rupture of conducting filaments controlled by charge hopping mechanism leads to the observed low resistance (ON) and high resistance (OFF) states, respectively.

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