Displacement damage dose used for analyzing electron irradiation-induced degradation of GaInP/GaAs/Ge space solar cells

被引:0
|
作者
Rong Wang
Ming Lu
YunHong Liu
Zhao Feng
机构
[1] Beijing Normal University,Key Laboratory of Beam Technology and Materials Modification of Ministry of Education
[2] Beijing Normal University,College of Nuclear Science and Technology
[3] Beijing Radiation Center,undefined
关键词
GaInP/GaAs/Ge solar cells; displacement damage dose; non-ionizing energy loss; electron irradiation;
D O I
暂无
中图分类号
学科分类号
摘要
Displacement damage dose (Dd) approach was applied to analyze the electron irradiation-induced degradation of GaInP/GaAs/Ge space solar cells by effective 1 MeV electron Dd, the electron irradiation-induced maximum power Pmax degradation of the solar cells is plotted as a function of the effective 1 MeV electron Dd, and the result shows that all the measured electron data can be represented by a single curve using displacement damage dose. Obviously, the displacement damage dose approach simplifies the description of electron irradiation-induced degradation of GaInP/GaAs/Ge space solar cells, and also offers an alternative for handling the case where degradation occurs as a result of combined electron and proton irradiation.
引用
收藏
页码:296 / 299
页数:3
相关论文
共 50 条
  • [1] Displacement damage dose used for analyzing electron irradiation-induced degradation of GaInP/GaAs/Ge space solar cells
    WANG Rong1
    2 College of Nuclear Science and Technology
    3 Beijing Radiation Center
    Science China(Physics,Mechanics & Astronomy), 2011, (S2) : 296 - 299
  • [2] Displacement damage dose used for analyzing electron irradiation-induced degradation of GaInP/GaAs/Ge space solar cells
    Wang Rong
    Lu Ming
    Liu YunHong
    Feng Zhao
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 54 : S296 - S299
  • [3] Correlation between Displacement Damage Dose and Proton Irradiation Effects on GaInP/GaAs/Ge Space Solar Cells
    Liu Yun-Hong
    Wang Rong
    Cui Xin-Yu
    Wang Yong-Xia
    CHINESE PHYSICS LETTERS, 2009, 26 (02)
  • [4] Photoluminescence analysis of electron irradiation-induced defects in GaAs/Ge space solar cells
    Ming, Lu
    Rong, Wang
    Kui, Yang
    Yi Tiancheng
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 312 : 137 - 140
  • [5] Displacement damage dose approach to predict performance degradation of on-orbit GaInP/GaAs/Ge solar cells
    Lu, Ming
    Wang, Rong
    Liu, Yunhong
    Feng, Zhao
    Han, Zhaolei
    Hou, Chunyu
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 307 : 362 - 365
  • [6] Radiation damage of space GaAs/Ge solar cells evaluated by displacement damage dose
    Wu Yi-Yong
    Yue Long
    Hu Jian-Min
    Lan Mu-Jie
    Xiao Jing-Dong
    Yang De-Zhuang
    He Shi-Yu
    Zhang Zhong-Wei
    Wang Xun-Chun
    Qian Yong
    Chen Ming-Bo
    ACTA PHYSICA SINICA, 2011, 60 (09)
  • [7] Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell
    Hu Jian-Min
    Wu Yi-Yong
    Qian Yong
    Yang De-Zhuang
    He Shi-Yu
    ACTA PHYSICA SINICA, 2009, 58 (07) : 5051 - 5056
  • [8] Application of displacement damage dose approach to low-energy proton irradiated GaInP/GaAs/Ge solar cells
    Song, Ci
    Liu, Shuhuan
    Wang, Xuan
    Mu, Haibao
    Bai, Yurong
    Li, Haodi
    Xing, Tian
    He, Chaohui
    Chen, Wei
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2023, 545
  • [9] Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells
    Liu Yun-Hong
    Wang Rong
    Cui Xin-Yu
    Sun Xu-Fang
    CHINESE PHYSICS C, 2008, 32 : 243 - 246
  • [10] Adjusted NIEL calculations for estimating proton-induced degradation of GaInP/GaAs/Ge space solar cells
    Ming, Lu
    Rong, Wang
    Hong, Liu Yun
    Tao, Hu Wen
    Zhao, Feng
    Lei, Han Zhao
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 269 (17): : 1884 - 1886