Ba1−xSrxTiO3 thin-film-based X-band selective coplanar waveguide microwave resonator using SiO2 as buffer layer

被引：0
|
作者：
Rohit Miglani
Reema Gupta
Anjali Sharma
Monika Tomar
Arijit Chowdhuri
机构：
[1] University of Delhi,Department of Physics and Astrophysics
[2] University of Delhi,Department of Physics, Hindu College
[3] Atma Ram Sanatan Dharma College,Department of Physics
[4] University of Delhi,Department of Physics
[5] University of Delhi,Department of Physics, Acharya Narendra Dev College
来源：
Journal of Materials Research | 2023年 / 38卷
关键词：
Open circuited; Coplanar waveguide; Microwave resonator; Barium strontium titanate thin film; Pulsed laser deposition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：4009 / 4021
页数：12
相关论文
共 13 条
  • [1] Ba1-xSrxTiO3 thin-film-based X-band selective coplanar waveguide microwave resonator using SiO2 as buffer layer
    Miglani, Rohit
    Gupta, Reema
    Sharma, Anjali
    Tomar, Monika
    Chowdhuri, Arijit
    JOURNAL OF MATERIALS RESEARCH, 2023, 38 (16) : 4009 - 4021
  • [2] Evaluation of Ta2O5 as a buffer layer film for integration of microwave tunable Ba1-xSrxTiO3 based thin films with silicon substrates
    Cole, MW
    Joshi, PC
    Ervin, M
    Wood, M
    Pfeffer, RL
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) : 3967 - 3973
  • [3] Improving the dielectric losses of (Ba,Sr)TiO3 thin films using a SiO2 buffer layer
    Reymond, V
    Michau, D
    Payan, S
    Maglione, M
    CERAMICS INTERNATIONAL, 2004, 30 (07) : 1085 - 1087
  • [4] X band film bulk acoustic wave resonator based on single crystalline LiNbO3 thin films with SiO2/Ta2O5 reflector
    Li, Peiran
    Lv, Lu
    Qian, Yicong
    Han, Xiaoyu
    Wei, Zijie
    Fan, Wei
    Chen, Shujian
    Yin, Xiaogui
    Zheng, Qin
    Jia, Na
    Zhang, Qingyu
    Zhu, Fen
    MATERIALS EXPRESS, 2022, 12 (03) : 504 - 510
  • [5] Characterization of (Ba1-x,Srx)TiO3 thin films deposited on Pt/Ti/SiO2/Si substrates with different Ti buffer layer thicknesses
    Lee, JC
    Yoon, SG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05): : 2182 - 2185
  • [6] Band alignments of SiO2 and HfO2 dielectrics with (AlxGa1-x)2O3 film (0≤x≤0.53) grown on Ga2O3 buffer layer on sapphire
    Feng, Zhaoqing
    Feng, Qian
    Zhang, Jincheng
    Zhang, Chunfu
    Zhou, Hong
    Li, Xiang
    Huang, Lu
    Xu, Lei
    Hu, Yuan
    Zhao, Shengjie
    Hao, Yue
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 745 : 292 - 298
  • [7] Stabilization of perovskite Pb(Mg1/3Nb2/3)O3 thin film by a thin BaTiO3 buffer layer on Pt/Ti/SiO2/Si
    Wakiya, N
    Shinozaki, K
    Mizutani, N
    THIN SOLID FILMS, 2002, 409 (02) : 248 - 253
  • [8] Characterizations of CeO2 and BaTiO3 double buffer layer for the growth of Y1Ba2Cu3O7-x superconducting thin film
    Kim, SM
    Lee, SY
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2001, 11 (01) : 2719 - 2722
  • [9] Dielectric and piezoelectric properties of highly (100)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer
    Guo, YP
    Suzuki, K
    Nishizawa, K
    Miki, T
    Kato, K
    JOURNAL OF CRYSTAL GROWTH, 2005, 284 (1-2) : 190 - 196
  • [10] Improved optical transmittance and crystal characteristics of ZnS:TbOF thin film on Bi4Ti3O12/indium tin oxide/glass substrate by using a SiO2 buffer layer
    Chia, Wei-Kuo
    Yokoyama, Meiso
    Yang, Cheng-Fu
    Chiang, Wang-Ta
    Chen, Ying-Chung
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (07): : 5847 - 5852
12