Self-organization of nanostructures on the n-GaN(0001) surface in the Cs and Ba adsorption

被引：0
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作者：
G. V. Benemanskaya
V. S. Vikhnin
S. N. Timoshnev
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
JETP Letters | 2008年 / 87卷
关键词：
61.68.+n; 73.20.-r; 79.60.-i;
D O I：
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摘要：
A regular self-organized 2D nanostructure of a new type of nanocombs has been created in situ in an ultrahigh vacuum on the n-GaN(0001) surface. The nanostructure is formed as a result of multilayer adsorptions of Cs and Ba. The structure is highly regular in the microrange, arranged in the form of combs 60–70 nm in diameter with a wall height of about 7 nm. It has been revealed that the nanostructure has a quasi-metallic conduction, a low work function of about 1.4 eV, and a high quantum yield of photoemission under light excitation in the GaN transparency region. A self-organization model is proposed, which implies the formation of a surface 2D longperiod incommensurate phase interacting with the superstructure of the Cs+ and Ba2+ ion clusters with allowance for the polaron compensation on the GaN surface.
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页码：111 / 114
页数：3
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