Growth of GaxIn1 − xSb solid solution single crystals by the Czochralski method

被引：0
|
作者：
G. N. Kozhemyakin
R. V. Ruban
M. A. Rom
M. E. Golovkova
机构：
[1] The V. Dal Eastern Ukrainian National University,Institute for Single Crystals
[2] National Academy of Sciences of Ukraine,Frantsevich Institute for Problems of Materials Science
[3] National Academy of Sciences of Ukraine,undefined
来源：
Crystallography Reports | 2009年 / 54卷
关键词：
72.80.Ey; 61.72.Ff; 61.72.uj; 81.10.Aj; 81.10.Fq;
D O I：
暂无
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学科分类号：
摘要：
GaxIn1 − xSb solid solution single crystals (x = 0.03–0.09) have been grown. The dislocation density and electrophysical parameters are measured. A technique for the growth GaxIn1 − xSb single crystals by the Czochralski method with GaSb polycrystal feed is developed. The conditions for the growth Ga0.08In0.92Sb single crystals with a more homogeneous distribution of Ga along the bulk are determined.
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页码：712 / 716
页数：4
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