Low-K Dielectric Pocket and Workfunction Engineering for DC and Analog/RF Performance Improvement in Dual Material Stack Gate Oxide Double Gate TFET

In this paper, we investigate the effect of low K dielectric pocket on DC and analog/RF performance in dual material stack gate oxide double gate tunnel field effect transistor. For this, we have considered an optimized dielectric pocket at the interface of the source-channel tunneling junction to reduce the barrier width. A stack gate oxide (SiO2 + HfO2) with workfunction engineering is applied to improve the capacitive coupling, decrease the ambipolar, leakage currents and increase the ON-current (ION). In addition, the entire gate has been divided into three segments, named as tunnelling gate (M1) with workfunction (ϕ1), Control gate (M2) with workfunction (ϕ2) and auxiliary gate (M3) with workfunction (ϕ3). All the possible combinations of these workfunctions were considered to maintain dual work functionality. Further, technology computer-aided design (TCAD) simulations for these possible combinations were carried out and compared with single material stack gate oxide dual gate source dielectric pocket TFET (ϕ1 = ϕ2 = ϕ3). Simulation results shows that the workfunction combination (ϕ1 = ϕ3 < ϕ2) outperforms the other three structures. Further, the performance of this device is compared with dual material control gate source dielectric pocket TFET (DMCG-SDP-TFET) with SiO2 gate oxide. The dielectric pocket at the tunneling junction and workfunction engineering on the stack gate oxide shows significant enhancement in ON state current (1.47× 10− 4A/μm), ION/IOFF (3.14× 1012), point subthreshold slope (15.7mV/decade), transconductance (1.02× 10− 3S), cut-off frequency (1.93× 1011Hz) and significant changes in other analog/RF performance parameters, making this device suitable for high frequency and low power applications.